Abstract
Research for third generation solar cell technology has been driven by the need to overcome the efficiency and cost problems encountered by current crystalline Si- and thin-film-based solar cells. Using first-principles methods, Ge/Si and Si/Ge core/shell and Si-Ge layered nanowires are shown to possess the required qualities for an efficient use in photovoltaic applications. We investigate the details of their band structure, effective mass, absorption property, and charge-carrier localization. The strong charge separation and improved absorption in the visible spectrum indicate a remarkable quantum efficiency that, combined with new designs, compares positively with bulk Si.
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