Abstract

In this paper, on the basis of first-principles, the CASTEP module of Materials Studio is used to calculate the band structures and optical properties of CuFeSe2 and CuFeS2 under the PBE pseudopotential of the generalized gradient approximation (GGA). The calculated results show that both CuFeSe2 and CuFeS2 are direct bandgap semiconductors with forbidden band widths of 0.64 eV and 1.06 eV, respectively. In the visible light range, the highest absorption coefficient of CuFeSe2 is 1.082×105 cm-1, the average reflectivity is 0.52, the maximum conductivity is 7.23 fs-1, the electrostatic constant is 65.9; the maximum value the highest absorption coefficient of CuFeS2 is 0.872×105 cm-1, the average reflectivity is 0.44, the maximum conductivity is 4.44 fs-1, the static dielectric constant is 52.32. The calculation results in this paper show that compared with CuFeS2, CuFeSe2 has advantages in photoconductivity and carrier separation, but has disadvantages in band gap and reflectivity. It is recommended to combine the two materials to prepare tandem solar cells.

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