Abstract
Using the first-principles band-structure method and the special quasirandom structure approach, we have studied the electronic band structure of 6.1 Å family binary antimonide compounds and their ternary alloys. The direct and indirect optical bowing parameters for the AlxGa1−xSb and AlxIn1−xSb ternary alloys have been calculated. The direct to indirect crossover point of ternary alloy is given. Furthermore we calculated the important band offsets between InAs and antimonide compounds, which determine both transport and quantum confinement in the interface of a heterostructure.
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