Abstract
The electronic structure and permittivity of Al-doped 3C-SiC are studied by using the first principles plane-wave pseudopotential method based on the density functional theory, and compared with those of undoped 3C-SiC. Results show that the Fermi energy level introduced into valence band and band gap is slightly widened through Al doping for 3C-SiC, and that the permittivity is greatly improved in a frequency range of 8.2-12.4 GHz. Al doped 3C-SiC powder absorber is prepared by combustion synthesis, and the permittivities of the samples are measured in the frequency range of 8.2-12.4 GHz by vector network analyzer, which validates the results of theoretical calculation. The mechanism of microwave loss is discussed.
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