First-principle study of puckered arsenene MOSFET

Abstract

Two-dimensional material has been regarded as a competitive silicon-alternative with a gate length approaching sub-10 nm, due to its unique atomic thickness and outstanding electronic properties. Herein, we provide a comprehensively study on the electronic and ballistic transport properties of the puckered arsenene by the density functional theory coupled with nonequilibrium Green’s function formalism. The puckered arsenene exhibits an anisotropic characteristic, as effective mass for the electron/hole in the armchair and zigzag directions is 0.35/0.16 m0 and 1.26/0.32 m0. And it also holds a high electron mobility, as the highest value can reach 20 045 cm2V–1s–1. Moreover, the puckered arsenene FETs with a 10-nm channel length possess high on/off ratio above 105 and a steep subthreshold swing below 75 mV/dec, which have the potential to design high-performance electronic devices. Interestingly, the channel length limit for arsenene FETs can reach 7-nm. Furthermore, the benchmarking of the intrinsic arsenene FETs and the 32-bit arithmetic logic unit circuits also shows that the devices possess high switching speed and low energy dissipation, which can be comparable to the CMOS technologies and other CMOS alternatives. Therefore, the puckered arsenene is an attractive channel material in next-generation electronics.