Abstract
In this study, we have investigated the impact of various defects and deformations such as rough edge, twist, wrap (tube) and ripple on the NDR (negative differential resistance) behavior of a MoSe2 armchair (ANR) MOSFET. We have studied the current voltage characteristics of the device under these deformations along with the transmission spectrum of the ANR channel. Change in the NDR region and peak-to-valley ratio has been observed for each deformation, and significant changes were observed in each case.
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