Abstract
An original Monte Carlo study of the equilibrium microscopic and macroscopic recombination cross-sections at shallow impurity centres is presented. Both cross-sections are investigated in lightly dopedp-Si as functions of the temperature and ionized acceptor concentration. In order to treat generation-recombination processes we extend the semi-classical Boltzmann equation through a simulation of the carrier motion in the energy-configuration space of an impurity centre. The analysis of the scattering rates as a function of the total carrier energy enables a microscopic interpretation of the capture process to be carried out. The role of excited levels is naturally included and found to be of main importance at increasing lattice temperatures. Numerical results are then compared with available experiments and existing analytical calculations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
