Abstract
SiO2/Si(100) interfaces were for the first time observed by a spherical aberration-corrected high-resolution transmission electron microscope in a cross-sectional mode. As the Fresnel fringes were not contrasted at the interfaces, the interfacial structures were clearly observed without the need for artificial image contrast. Atomic steps and defects on the Si(100) surfaces were accurately identified. Also, image simulations with the target imaging performance revealed oxygen atomic columns between silicon-silicon bonds. The present instrument is of potential use for semiconductor science and technology, even for the analysis of oxygen atoms at interfaces.
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