Abstract
ABSTRACTThe formation and properties of acceptor-hydrogen pairs in GaN have been studied using radioactive 111mCd acceptors and the perturbed γγ angular correlation spectroscopy (PAC). After H-loading by low energy implantation (100 eV) at temperatures between 295 K and 473 K, the formation of two Cd-H complexes involving about 30% of the Cd-acceptors is observed. The complexes have been identified as single hydrogen atoms bound to the Cd acceptor in two different configurations. The dissociation enthalpies of these configurations have been determined as 1.1(1) eV and 1.8(1) eV, respectively.
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