First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition

Delong Cui Delong Cui,D Pavlidis,Shawn Hsu Shawn Hsu

doi:10.1109/iciprm.2001.929098

First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition

Delong Cui Delong Cui, D Pavlidis + Show 1 more

https://doi.org/10.1109/iciprm.2001.929098

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Publication Date: May 14, 2001

Citations: 1

Affiliation: University of Michigan–Ann Arbor

#PNP HBTs #PNP HBT + Show 8 more

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Abstract

The MOCVD growth of InP/InGaAs PNP HBT layers and the successful fabrication and operation at high frequency of devices made on such layers are reported for the first time. The PNP HBTs employed a zinc-doped InP layer as emitter while the base was made with a 500 /spl Aring/ thick n-type InGaAs layer doped at 5/spl times/10/sup 18/ cm/sup -3/. Microwave measurements indicated f/sub T/ of more than 11 GHz at J/sub C/=8.25/spl times/10/sup 4/ A/cm/sup 2/ for these MOCVD-grown InP/InGaAs PNP HBTs.

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