Abstract
We have grown an AlGaAs/GaAs double-heterostructure (DH) light-emitting diode (LED) on a GaAs(111)A-5°-misoriented substrate using only Si dopant by molecular beam epitaxy. Conduction type and carrier concentration were controlled by flux ratio and Si cell temperature. Smooth heterointerfaces were also obtained. The p-n junction showed a turn-on voltage of 1.2 V and a reverse voltage of 2.5 V at 1 mA. The AlGaAs/GaAs LED exhibited dc operation at 300 K. The optical output power was 30 nW at 150 mA, and the peak in the spectrum was 875 nm with the full width at half-maximum of 28 nm.
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