First demonstration of single-layer InAs/InP (100) quantum-dot laser: continuous wave, room temperature, ground state

Abstract

Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at room temperature on the QD ground state transition employing a single-layer of QDs grown by metal organic vapour phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). These QDs on the QW laser exhibit a high slope efficiency and a lasing wavelength of 1.74 µm, which is important for biomedical applications.