Abstract
We report for the first time the large-signal power performance of a MMIC amplifier based on GaInP/GaAs HBT's. A output power of 9.9 W and power-added efficiency of more than 30% are measured at X-band. These results compare favorably with those measured from AlGaAs/GaAs HBT's, demonstrating that GaInP/GaAs HBT's are suitable for microwave power applications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
