Abstract
Quantum well heterostructures (QWH) in the novel dilute nitride Ga(NAsP)/GaP-material system have been grown pseudomorphically strained to GaP-substrate by metal organic vapour phase epitaxy (MOVPE). The high crystalline perfection has been determined by detailed structural analysis applying high-resolution X-ray diffrcation (XRD). The active QWH have been embedded in (AlGa)P/GaP-waveguide structures. Electrical injection lasing has been verified for broad area laser devices at low temperatures (80K–150K) for the first time in this novel material system. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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