First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

Abstract

We successfully developed 25-nm quad CoFeB/MgO-interfaces perpendicular magnetic tunnel junction (quad-MTJ) with enough thermal stability. To fabricate the quad-MTJ, a physical vapor deposition (PVD) process for depositing novel free layer and low resistance-area (RA) product MgO layer and low-damage fabrication processes were developed. The developed quad-MTJ technology and advanced process bring better tunnel magneto resistance (TMR) ratio and RA to quad-MTJ than those of double-interface MTJ (double-MTJ), even though quad-MTJ has an additional MgO layer. Scaling down the MTJ size to 25 nm, we demonstrated the advantages of quad-MTJ compared with double-MTJ as follows: 1) two times larger thermal stability factor (Δ), which results in over ten years retention; 2) superiority of large Δ in the measuring temperature range up to 200 °C; 3) ~1.5 times higher write efficiency; 4) lower write current at short write pulse regions at less than 100 ns; and e) excellent endurance of over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> thanks to higher write efficiency, which results from the reduced voltage owing to low RA and the low damage integration process technology. As a result, the developed quad-MTJ technologies will open the way for the realization of high-density STT-MRAM with low power, high speed, high reliability, and excellent scalability down to 2× nm node.