First characterisation of 3D pixel detectors irradiated at extreme fluences

Abstract

Highly irradiated silicon sensors are currently being investigated within the scenario of the most powerful particle accelerator proposed for the post-LHC era, i.e the Future Circular Collider (FCC), for which radiation tolerance up to a level of 8 × 1017 neq/cm2 is required. In this paper, 3D strip and pad detectors irradiated with neutrons up to a fluence of 3 × 1017 neq/cm2 (1 MeV neutron equivalent) are characterised for the first time: the charge collection measurements with Transient Current Technique (TCT) are carried out at several voltages and the results are reported.