Abstract
The transport of charge carriers in semiconductors is fundamental to electronics — usually however one measures average properties only, e.g. the mobility due to collisions averaged over all carrier energies. Several works have shown that radiation in the far infrared can selectively interact with certain subensembles of the carrier distribution, and thus make possible to perform state-selective measurements of e.g. the scattering time (ns to fs time scale). By using step-tunable pulsed gas lasers, with power up to 1 MW, a nonthermal population can be induced resulting in saturated transmission, saturated photo-conductance and nonlinearities in other effects such as in the photon drag effect. A great advantage over common optical pumping in the near infrared or visible spectrum is that the far-infrared radiation does not produce any extra electron-hole pairs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
