Abstract
Our previous work on finite-frequency shot noise S(\ensuremath{\omega}) in a correlated tunneling current has been extended to investigate the shot-noise behavior in a single-electron transistor (SET), with emphasis on asymmetric SET. We found that both the increase of the asymmetry and the increase of the gate voltage will broaden S(\ensuremath{\omega}), and S(0) is further suppressed by the gate capacitance. At low bias voltage, a condition is obtained under which the noise spectrum S(\ensuremath{\omega}) is white (frequency-independent). We have also demonstrated at the quantitative level how the signal-to-noise ratio in a SET can be controlled by adjusting the gate voltage and the degree of asymmetry.
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