Abstract
We have grown high-quality InxGa1-xN/GaN triple-quantum-well microdisks on LiAlO2 substrate by plasma-assisted molecular beam epitaxy. The InxGa1-xN/GaN microdisk with a hexagonal shape of oblique face 28o-angle off c-axis was achieved. The mechanism of the termination of awl-shaped growth and the growth rates of GaN-barrier and InxGa1-xN-well were evaluated and confirmed with the triple quantum wells. Based on the growth rates and 28o-angle geometric shape, one can control the finite size of InGaN/GaN microdisks by plasma-assisted molecular beam epitaxy.
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