Finite GB and MOS parasitic capacitance effects in a class of MOSFET-C filters

M Ismail,H.K Shin,D.Y Kim

doi:10.1109/mwscas.1990.140877

Finite GB and MOS parasitic capacitance effects in a class of MOSFET-C filters

M Ismail, H.K Shin + Show 1 more

https://doi.org/10.1109/mwscas.1990.140877

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Publication Date: Aug 12, 1990

Citations: 4

Affiliation: The Ohio State University, Jeonbuk National University

#Finite Gain Bandwidth #Gain Bandwidth + Show 8 more

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Abstract

A discussion is presented of the effects of the finite op-amp gain bandwidth (GB) and the MOS intrinsic and extrinsic parasitic capacitances on the performance of a recently reported class of MOSFET-C continuous-time integrated filters. This class of filters is designed directly in the MOS domain, without having to develop an intermediate active-RC prototype. It is shown that the structures are insensitive to intrinsic parasitic capacitances. Ways to compensate for the GB effects are proposed. >

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