Finite element simulation and experimental investigation of in-situ laser-assisted diamond turning of monocrystalline silicon

Abstract

While the effectiveness of in-situ laser-assisted diamond turning (In-LAT) for promoting the ductile machinability of monocrystalline silicon has been demonstrated, the underlying cutting mechanisms remain inadequately understood. In this study, we investigate the fundamental mechanisms involved in the In-LAT of monocrystalline silicon by finite element (FE) simulations and experiments. Specifically, a FE model of In-LAT of monocrystalline silicon is developed, which incorporates a Drucker–Prager constitutive model to address the brittle fracture of the material, as well as temperature-dependent materials properties to address the thermal softening effect. Furthermore, experiments of In-LAT of monocrystalline silicon are conducted with the self-developed In-LAT device, including tapering cutting and end face cutting. Simulation results demonstrate that In-LAT significantly increases the critical depth of cut for the brittle-to-ductile transition of monocrystalline silicon in tapering cutting mode by 72.2% compared to conventional cutting, accompanied with significantly reduced cutting forces, continuous chip profile and reduced surface brittle damage. The promotion of ductile machinability of monocrystalline silicon under In-LAT is attributed to the reduction and dispersion of stress in the cutting zone, which is in contrast to the significant stress concentration at the rake face and cutting edge in conventional cutting. And simulation results also provide an optimal temperature field of 900 K for the In-LAT of monocrystalline silicon, above which the excessive plastic flow accompanied by thermal accumulation results into deteriorated surface roughness. These findings provide valuable insights for understanding the cutting mechanisms of In-LAT and the parameter optimization for In-LAT application.