Abstract

In this paper we report on a new Monte Carlo (MC) module incorporated in our Heterojunction 2D Finite element FET simulator H2F [1]. For the first time this module combines a precise description of the device geometry with realistic particle simulation of the non-equilibrium hot carrier transport in ultra-short recess gate compound FETs. The capabilities of the new finite element MC module are illustrated in example simulations of two compound FETs fabricated in the Nanoelectronics Research Centre of Glasgow University.

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