Abstract
This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage V CE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.
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