Abstract
The time dependent temperature distribution on a silicon single crystal has been step-wise simulated during the Czochralski (CZ) growth of a 6 inch rod from 45 kg poly-silicon charge, taking into account the physical and geometrical constraints to the heat transfer given by the overall pulling furnace architecture. For each selected growth step a conduction dominated Laplace's model with detailed boundary conditions and careful material properties has been solved by means of the finite element technique.
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