Abstract
The 3ω method is an attractive technique for measuring the thermal conductivity of materials; but it cannot characterise high thermal conductivity ultra-thin film/substrate systems because of the deep heat penetration depth. Recently, a modified 3ω method with a nano-strip was specifically developed for high thermal conductivity thin film systems. This paper aims to evaluate the applicability of this method with the aid of the finite element analysis. To this end, a numerical platform of the modified 3ω method was established and applied to a bulk silicon and an AlN thin-film/Si substrate system. The numerical results were compared with the predictions of theoretical models used in the 3ω method. The study thus concluded that the modified 3ω method is suitable for characterising high thermal conductivity ultra-thin film/substrate systems.
Highlights
Thermal management of advanced thin-film/substrate systems plays an important role in their applications [1,2,3,4,5,6]
A few methods have been developed for characterising the thermal conductivity of thin-films, including time-domain thermoreflectance (TDTR) method [9], scanning thermal probes [10,11], coherent optical method [12,13], Raman spectroscopy [14,15,16], and the 3ω method [1,17,18]
[1], This paper aims to evaluate the applicability of the modified 3ω method for characterising high the thermal conductivity models used in this method has not been well evaluated yet
Summary
Thermal management of advanced thin-film/substrate systems plays an important role in their applications [1,2,3,4,5,6]. In comparison with that of bulk material, the thermal conductivity of a thin-film could be significantly different because of the size effect and microstructural difference [2,3,7]. Characterising the thermal conductivity of a thin-film is challenging due to the fact that controlling the heat penetration depth in micro-/nano-scale is difficult [8]. If the thermal conductivity of a thin-film is relatively high, the measurement becomes more challenging as the heat could penetrate into the specimen fast and deeply [1]. The 3ω method has several unique advantages over the others. This method is non-destructive and relatively cost-effective [1]. The metal-strip element, used in the 3ω method as a heater and a temperature sensor, is merely a fraction of a Celsius degree hotter than the surrounding material
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