Abstract
This article presents the analysis of semiconductor laser arrays based on the finite element method, with emphasis on nonuniform structures where the channel width and/or refractive index can vary across the array. The results show that the variation of channel width will have the same effect on the near-field intensity profile as the variation of channel refractive index. Based on this finding, a laser array structure devised to achieve a highly desirable uniform intensity distribution for the lowest-order mode is also presented. 8 refs.
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