FinFETs With a Deep Buried Channel to Reduce the Readout Noise in CMOS Image Sensors

Abstract

FinFETs with a deep buried channel (DBC) are proposed for the reduction of readout noise in complementary metal-oxide–semiconductor image sensors (CISs). Simulation results show that the influence of defects at the Si/SiO2 interface on the drain current is reduced for the DBC design as the drain current variation in DBC FinFETs is 50% smaller than those in surface- and buried-channel metal-oxide–semiconductor field-effect transistor. The potential barriers at the fin sidewalls serve to confine electrons away from the defects at the Si/SiO2 interface, resulting in decreased readout noise in the CIS.