FinFET Response under Radiation and Bias Stress

Abstract

Abstract: The study of FinFET Response under various parameters change is widely studied in many branches of Electronics Engineering. FinFET structure is going beyond the downscaling limit of the conventional planar CMOS technology. The major applications of FinFET have been mainly devoted to digital circuits, analog circuits, and targeting a successful mixed integration of analog and digital circuits. The purpose of this paper is to provide a clear and exhaustive understanding of the state of the art, challenges, and future trends of the FinFET technology from a microwave modeling perspective. Inspired by the traditional modeling techniques for conventional MOSFETs, different strategies have been proposed over the last years to model the FinFET behavior at gamma radiation. With the aim to support the development of this technology, a comparative study of the achieved results is carried out to gain both useful feedbacks to investigate the microwave FinFET performance as well as valuable modeling. Keywords: CMOS, MOSFET, FinFET, Hot carriers, Gamma Chamber, SCE, DIBL, Oslo Si-Bulk FinFET, Wafer probe station.