Abstract
AbstractContinuous miniaturization and aggressive scaling challenges in metal oxide semiconductor (MOS) devices are obstacles in the development of modern semiconductor industry. Different methodologies, techniques and new device structures are devised in order to overcome the challenges posed by continuous scaling. Fin-type field-effect transistor (FinFET) is the best substitute for conventional metal oxide semiconductor field-effect transistor (MOSFET) devices due to the attracting features like, reduced short channel effects, better isolation, improved channel stability, independent gate control and better subthreshold slope in comparison with the traditional devices. In this paper history, evolution, classification and different structures of FinFET devices are broadly discussed. Besides, detailed analysis of FinFET-based SRAM cell is presented with focus on process, voltage and temperature (PVT) variations. Memory design is of prime important for any microprocessor design and for communication applications like wireless sensor nodes as well. FinFET is the best contender to replace conventional MOSFET devices due to the attractive features. This paper mainly focuses on reliability analysis and design aspects of FinFET logic devices and FinFET SRAM cell as well.KeywordsCMOSFinFETPower dissipationPVTSRAM
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