Abstract
Nanoelectromechanical system technology is applied for a complementary metal-oxide-semiconductor device to provide a novel function. Based on an independently controlled double-gate FinFET, the fin of the proposed transistor is suspended by replacing the solid-state gate dielectric with a gas-state gate dielectric, which enables flip-flop actuation of the fin. Flip-flop actuation of the fin is accomplished via electrostatic force from two separated gates, representing a binary mechanical state of the fin. It is anticipated that the virtues of the reported device can be exploited in transformable circuit units and digital memory transistors.
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