Abstract

An advantage of focused ion beam (FIB) implantation has been greatly enhanced by computer software of varying accelerating voltage and interchanging ion species, making it possible to produce doping profiles of any kind without a mask. This implantation technique was also applied to a crystal growth process. The newly constructed facility composed of an MBE growth chamber and an FIB implanter could grow pattern-doping GaAs/AlGaAs multilayered crystals with good quality because of an enclosed process in an ultrahigh vacuum. FIB based technology with superior abilities offers a powerful device fabrication tool and opens up a new field of fabrication process.

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