Abstract
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From the experimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate here how, by using a suitable combination of composition and substrate, the magnitude of the epitaxial strain can be controlled in a continuous manner. The phase diagram of PbxSr1−xTiO3 films grown epitaxially on (110)-DyScO3 is calculated using a Devonshire–Landau approach. A boundary between in-plane and out-of-plane oriented ferroelectric phases is predicted to take place at x≈0.8. A series of PbxSr1−xTiO3 epitaxial films grown by molecular beam epitaxy shows good agreement with the proposed phase diagram.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.