Abstract
The capacitance transients caused by hole emissions from Fe-related deep levels were measured in GaAs and GaAs0.77P0.23 at different temperatures. Non-exponential transients were investigated under different conditions and found to relate to the alloy random effect. The transients were decomposed using a Laplace defect spectroscope (LDS). The three well-resolved sharp peaks in the LDS spectra of GaAs0.77P0.23 were assigned to the fine structures of the Fe-related deep levels. The activation energy differences of the fine structures were determined by linear fitting of the slopes of temperature dependences of hole emission rates. The results suggest that the local composition fluctuation in the nearest neighbors of Fe atoms is likely to be responsible for the fine structures.
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