Abstract
Optically detected magnetic resonance (ODMR) and levelanticrossing spectroscopy were applied to study g-factors andexchange splittings of localized excitons and separatelylocalized electrons and holes at the Xz-Γ crossoverof the conduction band states in a GaAs/AlAs superlattice witha composition gradient. g-factors, exchange splittings and theorder of the exciton radiative levels were determined. In thetransition region we clearly observed the disappearance of type IIexcitons created by the Xz electron in AlAs and a heavyhole in GaAs layers. Appearance of type I excitons with an order of magnitude larger exchange was verified by LACspectroscopy. Intermediate `type II-like' and `type I-like'excitons were found in the transition region by ODMR and LACwith different exchange splittings and luminescence decay times.Besides ODMR of excitons with a definite value of exchangesplitting, ODMR ascribed to separately localized electrons and holes with a distribution of exchange splittings was detected.
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