Abstract
The characteristics of resist-ion interactions are reviewed and the influence of such interactions on the properties of conventional ion beam lithography discussed. Ion beam exposure profiles in polymethyl methacrylate (PMMA) using protons and doubly charged silicon ions are presented and shown to verify the attributes of ion beam lithography. It is also demonstrated that ion beam lithography can be used to fabricate lines as small as 30 nm in dimension. The application of ion beam lithography to the fabrication of submicrometer-gate GaAs FETs is discussed and the results of fabricated devices presented.
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