Abstract
AbstractTo prepare constituent materials applicable to a Cu metallization technology of Si‐LSI, the preparation conditions of Cu‐Ti intermetallic compound films have been examined and the thermal stability of the Cu/CuTi2/Si contact structure has been studied using CuTi2 compound films as a diffusion barrier. As a result, a stoichiometric intermetallic compound film of CuTi2 was prepared successfully at a substrate temperature of 300°C by dc sputtering using a composite target with an area ratio of Cu : Ti = 51 : 49.From the study on the CuTi2/Si contact structure, it was revealed that the CuTi2 phase was stable up to 500°C and a thin interface layer of Ti silicide was formed at the interface of CuTi2/Si but the excess diffusion and/or reaction have not been observed. Ti silicide layer formed at the interface is believed to be effective for low contact resistance. To examine whether or not CuTi2 films are suitable for Cu metallization technology, the thermal stability of Cu/CuTi2/Si contact structure was examined. It was found that the structure is successfully stable up to 500°C and is useful for Cu metallization technology. The reason is believed to be as follows: the interface of Cu/CuTi2 is in the chemical equilibrium state and CuTi2 itself is a stable compound phase at high temperatures in the Cu‐Ti alloy system.
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