Abstract
The band structure and electric properties of films created from a partially fluorinated graphene suspension are analyzed in this paper. As may be inferred from the structural study, graphene islands (quantum dots) are formed in these films. Various types of negative differential resistance (NDR) and a step-like increase in the current are found for films created from the fluorinated graphene suspension. NDR resulting from the formation of the potential barrier system in the film and corresponding to the theoretical prediction is observed for a relatively low fluorination degree. The origin of the NDR varies with an increase in the fluorination degree of the suspension. The observation of NDR in the fluorinated films widens the range of application of such films, including as active device layers fabricated using 2D printed technologies on rigid and flexible substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
