Abstract
We prepared alumina passivation films deposited by a sol-gel wet process for silicon substrates. Aluminum acetylacetonate was used as a precursor, and the solution was spin-coated onto silicon substrates. Calcination temperature dependence of the passivation quality of the films was evaluated mainly by measuring effective lifetime using a photo conductance decay technique and capacitance–voltage measurements. Also, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy were carried out to evaluate film properties. A large amount of negative fixed charge density (Qf=−3.1×1012cm−2) exists in the films calcined at 300°C. On the other hand, a long effective lifetime of 400μs was obtained for the sample calcined at 600°C, and the passivation films had a large amount of positive fixed charge density (Qf=3.6×1012cm−2) with a low interface state density.
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