Film preparation using plasma or ion activation

Abstract

It has been well established that reactive layer growth can be enhanced by using plasma or ion activation. The capabilities of these techniques are discussed in connection with results obtained for the following film deposition processes: (1) the formation of silicon layers by plasma-induced chemical vapour deposition (CVD) from SiCl 4H 2; (2) the synthesis of Si x N y H z coatings by plasma-induced CVD from SiNH 3; (3) the preparation of hard and transparent (diamond-like) carbon films by the condensation of ionized organic species.