Film Growth Modeling of Metal Organic Chemical Vapor Deposition of Copper from Copper(I)-Hexafluoroacetylacetonate Vinyltrimethoxysilane in the Presence of Hydrogen

Abstract

Copper films were deposited by metalorganic chemical vapor deposition (MOCVD) using copper(I)-hexafluoroacetylacetonate vinyltrimethoxysilane [Cu(hfac)(VTMOS)] as the precursor in the presence of H2. In contrast to blanket growth in Ar, selective growth was maintained on TiN versus SiO2 at a precursor partial pressure of 1.48×10-2 Torr and 473 K by introducing H2 as the ambient gas. A film growth modeling based on the Langmuir-Hinshelwood rate equation was established to describe the copper deposition at the initial nucleation stage in H2. The result suggested that H2 physically adsorbed on TiN surface to hinder the nucleation of copper. Applying a dc bias on substrate surface showed that the film growth was accelerated by both positive and negative biases, indicating a disproportionation reaction dominated the film growth. The less promoted growth rate under positive bias was attributed to the steric factor between the intermediate Cu(hfac) and the charged substrate.