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Abstract
Silicon carbon nitride (SiCN) compounds have aroused great interest as dielectric materials for direct bonding because of the high thermal stability and high bond strength, as well as its Cu diffusion barrier properties. While wafer-to-wafer direct bonding, including the dielectric deposition step, is generally performed at high temperature (>350 °C), applications such as heterogeneous chips and DRAMs would require wafer-to-wafer direct bonding at lower temperature (<250 °C). In this study, we evaluate, for SiCN deposited at various temperatures, the impact for direct wafer bonding of lowering the temperature of all processes. Chemical and mechanical properties of SiCN direct bonding are studied.
Highlights
OPEN ACCESSFilm Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications
Two-dimensional circuit scaling is becoming problematic because of footprint limitations and high development cost
Surface activated bonding and chemical mechanical polishing (CMP) processes were combined to provide ultra-smooth surfaces, as such direct bonding without adhesive materials can be processed at room temperature while maintaining ultra-fine pitch and high accuracy in wafer-to-wafer stacking.[14,15,16,17,18,19,20,21]
Summary
Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications. Surface activated bonding and chemical mechanical polishing (CMP) processes were combined to provide ultra-smooth surfaces, as such direct bonding without adhesive materials can be processed at room temperature while maintaining ultra-fine pitch and high accuracy in wafer-to-wafer stacking.[14,15,16,17,18,19,20,21] In this direct bonding scheme, two different concepts are considered–one is homogeneous bonding as required for 3D sequential integration using dielectric-todielectric and TSVs, and the other is hybrid bonding based on Cu-toCu, Cu-to-dielectric, and dielectric-to-dielectric simultaneously bonding. SiCN films for hybrid bonding are generally fabricated by plasma enhanced chemical vapor deposition (PECVD) at high temperature (>350 °C). Following post-bond annealing (
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