Abstract
Far-infrared cyclotron resonance of a two-dimensional electron gas in strained Si/SiGe single quantum wells was studied at low temperatures (1.5–25K) in high magnetic fields up to 40T. We found a remarkable Landau-level filling factor (ν) dependence of the effective mass with prominent peaks at around ν=1 and 2. The carrier scattering time deduced from the line-width was found to oscillate also as a function of ν. The result is explained by screening of impurity potentials that depends on the filling of the Landau levels.
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