Abstract

This paper examines a new technique to improve the figure of merit of laterally vibrating RF-MEMS resonators through an energy-preserving suspended addendum frame structure using finite element analysis. The proposed suspended addendum frame on the sides of the resonant plate helps as a mechanical vibration isolator from the supporting substrate. This enables the resonator to have a low acoustic energy loss, resulting in a higher quality factor. The simulated attenuation characteristics of the suspended addendum frame are up to an order of magnitude larger than those achieved with the conventional structure. Even though the deployed technique does not have a significant impact on increasing the effective electromechanical coupling coefficient, due to a gigantic improvement in the unloaded quality factor, from 4106 to 51,136, the resonator with the suspended frame achieved an 11-folds improvement in the figure of merit compared to that of the conventional resonator. Moreover, the insertion loss was improved from 5 dB down to a value as low as 0.7 dB. Furthermore, a method of suppressing spurious mode is demonstrated to remove the one incurred by the reflected waves due to the proposed energy-preserving structure.

Highlights

  • RF-MEMS resonators have been used for many applications, ranging from acoustic filters used for communication systems to timing application, owing to their excellent power handling capability and low motional resistance [1,2,3,4,5]

  • Amidst the most attractive properties of RF-MEMS resonators are their compatibility with existing CMOS technology, making them highly attractive for monolithic integration with CMOS circuitry [6,7,8,9,10]

  • This paper aims to introduce a new approach for improving figure of merit (FoM) by using a suspended energy-preserving addendum frame

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Summary

Introduction

RF-MEMS resonators have been used for many applications, ranging from acoustic filters used for communication systems to timing application, owing to their excellent power handling capability and low motional resistance [1,2,3,4,5]. Amidst the most attractive properties of RF-MEMS resonators are their compatibility with existing CMOS technology, making them highly attractive for monolithic integration with CMOS circuitry [6,7,8,9,10]. In most of their applications, resonators with a high Q are of great importance in fulfilling the stringent requirements of the device.

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