Fifteen nanometer features by sidewall processing and pattern transfer

Abstract

A technique which uses conformally deposited silicon oxynitride on e-beam written polymethylmethacrylate structures to define 15 nm linewidths is described. The sidewalls can be used simply to narrow the opening in resist to produce fine metal lines with a lift-off process. Freestanding nitride structures can be produced which may be used for pattern transfer in a variety of methods. We demonstrate the production of narrow slots in metal. Additional processing is able to produce narrow slots in resist that then can be used for pattern transfer. We demonstrate a pair of 15 nm metal lines separated by approximately 20 nm. This technique can be applied to the fabrication of quantum effect devices, and has the potential of being extended to well below 10 nm features. These techniques have the potential to be applied in manufacturing since sidewall processing is already used widely in commercial complementary metal–oxide semiconductor processes.