Abstract
A field-induction-drain (FID) poly-Si thin-film transistor (TFT), in which an electrically induced layer is used as a drain, is proposed. This TFT achieves a low OFF current and a high ON/OFF current ratio by simply incorporating an additional gate electrode. Moreover, the structure can be modified to make it suitable for complementary MOS (CMOS) applications. In this unified-structure FID (UFID) TFT, n-channel operation and p-channel operation are interchangeable. This paper presents this electrically induced layer which works well as a TFT drain and has beneficial influence on TFT characteristics.
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