Abstract

Slow, nonexponential relaxation of electrical transport accompanied by memory effects can be induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. This behavior, which appears to be a form of space charge limited current flow, is found in extremely thin films on the insulating side of the superconductor–insulator transition. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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