Abstract
In this work, the electron field emission properties, photoluminescence, and structure of porous silicon emitters as a function of the anodizing voltages have been studied. Morphological features, such as sharp nanometer-scale tip geometries, or micrometer-scale asperities, and large hexagonlike porosity, have been observed in porous silicon using atomic force microscopy for samples prepared at low or high anodization voltages, respectively. Threshold fields for electron emission of 16.6Vμm−1 and of 11.4Vμm−1 have been obtained for samples prepared at anodizing voltages of 10V and 150V, respectively, which are close to values required for technological applications. Possible mechanisms of field enhancement are discussed.
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