Field‐Effect Transistors: Single‐Crystalline p‐Type Zn3As2 Nanowires for Field‐Effect Transistors and Visible‐Light Photodetectors on Rigid and Flexible Substrates (Adv. Funct. Mater. 21/2013)

Abstract

As reported by Ming-Qiang Zhu, Guozhen Shen, and co-workers on page 2681, single crystalline p-type Zn3As2 nanowires (NWs) are grown via a simple thermal evaporation process. Single and large-scale ordered Zn3As2 NW array field-effect transistors (FETs) on rigid SiO2/Si substrates and photodetectors on both rigid and flexible polyethylene terephthalate (PET) substrates are studied. They exhibit high performance, revealing that the p-type Zn3As2 NWs have important applications in future electronic and optoelectronic devices.