Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage

Abstract

This study is concerned with the fabrication and electrical characteristics of short-channel (2 μm) field-effect transistors (FETs) based on ZnO nanorods. In FET fabrication, single-crystal ZnO nanorods are grown using the catalyst-free chemical vapor deposition (CVD) method. Although the short-channel ZnO-nanorod FETs exhibit good electrical characteristics (a transconductance of 100 nS, electron mobility of 6 cm2 V−1 s−1, and a large turn-ON/OFF ratio of 104), their characteristics significantly depend on the length of the nanorods. The effect of the drain-source voltage on the threshold gate voltage is studied.