Abstract
Epsilon-near-zero (ENZ, dielectric constant εr≈0) materials have attracted significant research interest, however, their applications in the near-infrared regime are very limited. Conductive oxide (COx), owing to its moderate carrier concentration, is a candidate for ENZ material at telecom wavelengths based on the Drude model. Herein, we report an indium tin oxide (ITO) thin film as an ENZ material with cross-over wavelength, where real part of permittivity crosses zero, and enhanced light absorption at telecom wavelengths. We also report the investigation of electro-absorption modulation based on a metal-oxide-semiconductor (MOS)-like structure, more specifically a metal-oxide-ITO stack, where ITO works around ENZ. Based on the attenuated total reflectance (ATR) configuration, our test shows great promise for future electro-optical (EO) modulators. The operation speed of the MOS-like structure is limited mainly by RC delay.
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